GaPaO3

semiconductor

· GaPaO3

GaPaO₃ is an experimental gallium-based oxide semiconductor compound, likely a mixed-valence or perovskite-related material under investigation for wide-bandgap semiconductor applications. This compound belongs to the family of gallium oxides and related ternary systems being researched for high-temperature, high-power, and radiation-hard electronic devices where conventional semiconductors (Si, GaAs) reach fundamental limits. Primary interest centers on power electronics, RF devices, and extreme-environment sensing where the material's potential for wide bandgap performance could offer advantages over established alternatives, though practical device maturity remains in the research phase.

high-temperature electronicswide-bandgap semiconductorspower device researchRF/microwave applicationsradiation-hard componentsextreme-environment sensors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.720	eV	—
Magnetic Moment(μB)	0.000	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.435	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaPaO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control