GaO7 is a gallium oxide ceramic compound, part of the wider family of wide-bandgap semiconductors and transparent conducting oxides. This material exists primarily in research and developmental contexts, where gallium oxide ceramics are being investigated for high-temperature electronics, UV photodetectors, and power conversion devices due to their potential for extreme operating conditions beyond conventional silicon limitations.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.189 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.00100 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.6614 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.02783 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data