GaO2

ceramic

· JVASP-136679· GaO2

Gallium oxide (Ga₂O₃) is a wide-bandgap semiconductor ceramic with emerging applications in next-generation power electronics and RF devices. It is primarily pursued in research and early-stage industrial development rather than established high-volume production, with significant potential to outperform silicon and gallium nitride in high-voltage and high-temperature switching applications due to its superior breakdown field strength.

power semiconductor deviceshigh-voltage switchingRF power amplifierssolar-blind UV detectorsresearch/development stage

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	5.439	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.4323	eV/atom	—
Formation Energy(ΔHf)	-1.238	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaO2

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental