GaO2
ceramic· JVASP-136679· GaO2
Gallium oxide (Ga₂O₃) is a wide-bandgap semiconductor ceramic with emerging applications in next-generation power electronics and RF devices. It is primarily pursued in research and early-stage industrial development rather than established high-volume production, with significant potential to outperform silicon and gallium nitride in high-voltage and high-temperature switching applications due to its superior breakdown field strength.
power semiconductor deviceshigh-voltage switchingRF power amplifierssolar-blind UV detectorsresearch/development stage
Compliance & Regulations
?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.439 | kg/m³ | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.4323 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.238 | eV/atom | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.