GaNiN3

metal

· GaNiN3

GaNiN3 is a ternary nitride compound combining gallium, nickel, and nitrogen elements, representing an emerging material in the nitride family rather than a conventional alloy. This material exists primarily in research and development contexts, where it is being investigated for potential applications in high-temperature structural components, semiconductor interfaces, and advanced ceramic composites due to the thermal stability and hardness characteristics typical of nitride systems. The combination of gallium and nickel nitrides offers potential advantages in applications requiring both thermal resistance and chemical stability, though industrial adoption remains limited compared to established nitride alternatives like AlN, GaN, or Si₃N₄.

research and developmenthigh-temperature ceramicssemiconductor interfacesadvanced nitride compositesexperimental materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	1.413	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.460	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaNiN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control