GaNdO3

semiconductor

· GaNdO3

GaNdO₃ is an experimental rare-earth doped gallium oxide semiconductor compound, belonging to the family of wide-bandgap semiconductors with potential for high-power and high-temperature electronics. While not yet in mainstream commercial production, this material is being investigated in research settings for its potential to combine gallium oxide's superior thermal stability and breakdown field strength with rare-earth dopant (neodymium) functionality for enhanced device performance. The material's significance lies in its potential to enable next-generation power electronics and RF devices that operate at higher temperatures and voltages than conventional silicon or even standard GaN semiconductors.

Power semiconductor researchHigh-temperature electronicsWide-bandgap device developmentRF/microwave componentsEmerging materials evaluation

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.279	eV	—
Magnetic Moment(μB)	0.000	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.749	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaNdO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control