GaNaN3 — Properties & Data | MatWorld

GaNaN3

ceramic

· GaNaN3

GaNaN3 is an experimental gallium nitride-based ceramic compound that combines gallium nitride (GaN) with nitrogen-rich phases, representing research into advanced wide-bandgap semiconductor ceramics. This material family is under investigation for high-temperature, high-power electronic and optoelectronic applications where thermal stability and electrical performance beyond conventional GaN are critical. Its development reflects efforts to push beyond standard GaN limits in extreme environments such as aerospace power electronics, RF devices, and next-generation power conversion systems.

wide-bandgap semiconductorshigh-temperature power electronicsRF/microwave devicesaerospace power systemsresearch/development phase

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	0.7661	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.140	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaNaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental