GaMoS2

metal

· JVASP-114275· GaMoS2

GaMoS2 is an experimental compound combining gallium, molybdenum, and sulfur, belonging to the family of transition metal dichalcogenides—a class of layered materials under active research for advanced electronic and optoelectronic applications. While not yet widely deployed in mainstream engineering, materials in this family are being investigated for next-generation semiconductors, photovoltaic devices, and catalytic applications where their layered crystal structure and tunable electronic properties offer advantages over conventional bulk semiconductors. Engineers evaluating GaMoS2 should treat it as an emerging material; its performance in specific applications remains subject to ongoing development and characterization.

research and developmentoptoelectronic devicesthin-film semiconductorscatalytic applicationsnext-generation electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	4.928	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.1287	eV/atom	—
Formation Energy(ΔHf)	-0.6061	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaMoS2

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control