GaMnON₂ is a ceramic compound combining gallium, manganese, oxygen, and nitrogen—a quaternary nitride oxide belonging to the family of complex metal nitrides. This material is primarily of research and developmental interest, with potential applications in wide-bandgap semiconductor and photocatalytic domains where the combination of transition metal (Mn) activity and nitride-based electronic properties may offer advantages in energy conversion or environmental remediation.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 2.128 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.9800 | eV/atom | — |