GaMgN3 is an experimental ternary nitride ceramic compound combining gallium, magnesium, and nitrogen. This material belongs to the emerging family of complex nitride ceramics, currently in research and development phases rather than established industrial production. The compound is being investigated for potential applications in high-temperature structural ceramics and wide-bandgap semiconductor research, where the combination of nitride bonding and multiple metallic elements offers theoretical advantages in thermal stability and electronic properties compared to binary nitrides like GaN or AlN.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 4.382 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.520 | eV/atom | — |