GaLaN3

ceramic

· GaLaN3

GaLaN₃ (gallium aluminum nitride) is an experimental wide-bandgap ceramic compound combining gallium nitride and aluminum nitride phases, belonging to the III-V nitride family. Research interest in this material centers on high-temperature semiconductor and optoelectronic applications where the intermediate bandgap between GaN and AlN offers potential advantages in power electronics, RF devices, and deep-UV emitters. While not yet commercialized at scale, GaLaN₃ represents a promising intermediate composition for engineering enhanced thermal stability and carrier transport properties compared to binary nitride phases.

High-temperature power electronicsWide-bandgap semiconductorsRF/microwave devicesDeep-UV optoelectronicsThermal management applicationsResearch/development stage materials

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	2.998	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.220	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaLaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental