GaInO₃ is an indium gallium oxide ceramic compound belonging to the family of wide-bandgap semiconductors and transparent conducting oxides. This material is primarily of research and development interest rather than established industrial production, with potential applications emerging in next-generation optoelectronic and power electronic devices that require wide bandgap semiconductors for high-temperature or high-frequency operation.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | -1.534 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -0.6580 | eV/atom | — | ||
| ↳ | 1.200 | eV/atom | — |