GaInO2S is an experimental mixed-metal oxide sulfide ceramic compound containing gallium, indium, oxygen, and sulfur. This material belongs to the family of wide-bandgap semiconductors and mixed anion compounds under active research for optoelectronic and photocatalytic applications. Its notable feature is the combination of oxide and sulfide anions, which can modify electronic band structure and optical properties compared to conventional binary semiconductors, making it of interest for applications requiring tunable light emission or enhanced photocatalytic performance under visible light.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | -0.000361 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.8600 | eV/atom | — |