GaInO2N

ceramic

· GaInO2N

GaInO2N is an experimental oxynitride ceramic compound combining gallium, indium, oxygen, and nitrogen elements. This material belongs to the family of wide-bandgap semiconductors and mixed-anion ceramics, currently under research for optoelectronic and high-temperature applications rather than in established industrial production. Its potential lies in next-generation semiconductor devices, photocatalysis, and high-power electronics where the combination of a wide bandgap and tunable electronic properties could offer advantages over conventional III-V semiconductors, though its performance characteristics and manufacturing scalability remain subjects of active development.

semiconductor research deviceswide-bandgap electronicsphotocatalytic applicationshigh-temperature ceramicsoptoelectronic prototypesemerging materials development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	3.000	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.500	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaInO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental