GaHfO3 is an experimental mixed-metal oxide ceramic combining gallium and hafnium oxides, belonging to the family of wide-bandgap semiconductors and high-k dielectrics. This material is primarily of research interest for next-generation microelectronic and optoelectronic applications, where its high dielectric constant and thermal stability make it a candidate for advanced gate dielectrics, integrated photonics, and high-temperature device layers. Its development reflects the semiconductor industry's ongoing search for alternatives to traditional SiO2 and conventional hafnia-based dielectrics to overcome scaling limitations in smaller device nodes.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · PBE | ||
Magnetic Moment(μB)2 entries | 0.04200 | μB | DFT | ||
| ↳ | 0.3056 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -2.349 | eV/atom | DFT | ||
| ↳ | 0.5600 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data