GaHfO2F

semiconductor

· GaHfO2F

GaHfO₂F is a compound semiconductor combining gallium, hafnium, oxygen, and fluorine—an experimental material class designed to explore wide-bandgap semiconductor properties with potential for high-temperature and high-frequency device applications. This composition sits at the intersection of oxide and fluoride chemistry, offering researchers a platform to study how fluorine doping influences the electronic and thermal characteristics of hafnium oxide-based systems. While not yet mature for widespread industrial deployment, such materials are being investigated for next-generation power electronics, radiation-hard devices, and scenarios where conventional wide-bandgap semiconductors (SiC, GaN) face thermal or stability limits.

experimental wide-bandgap semiconductorshigh-temperature power electronicsradiation-hardened deviceshigh-frequency RF applicationsmaterials research & development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.900	eV	—
Magnetic Moment(μB)	1.579e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.2000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaHfO2F

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control