GaHfN3 is an experimental ternary nitride ceramic composed of gallium, hafnium, and nitrogen. This material belongs to the family of refractory nitrides and is primarily investigated in research settings for its potential thermal stability, hardness, and chemical resistance at elevated temperatures. The compound is notable as a candidate for next-generation high-temperature structural applications where conventional ceramics or transition metal nitrides may have limited performance, though it remains largely in the development phase without widespread commercial deployment.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 3.685 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.480 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data