GaGeTe2 is a ternary chalcogenide ceramic compound composed of gallium, germanium, and tellurium. This material belongs to the family of wide-bandgap semiconductors and chalcogenide glasses, which are typically investigated for infrared optics, photovoltaic applications, and thermoelectric devices. GaGeTe2 remains largely in the research phase, with potential applications in mid-to-far infrared photonics, phase-change memory systems, and solid-state thermal-to-electric energy conversion where its mixed-valence composition and thermal properties could offer advantages over conventional alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.151 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1424 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.08789 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data