GaGeO₂S is a quaternary ceramic compound combining gallium, germanium, oxygen, and sulfur—a mixed anion ceramic that bridges oxide and chalcogenide chemistry. This is a research-stage material primarily studied for infrared optical applications, particularly nonlinear optics and wide-bandgap semiconductor contexts, where the mixed anion structure offers potential for tuning optical transparency windows and nonlinear response compared to single-anion ceramics like GeO₂ or conventional sulfides.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 0.000619 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.8400 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data