GaGeO2S

ceramic

· GaGeO2S

GaGeO₂S is a quaternary ceramic compound combining gallium, germanium, oxygen, and sulfur—a mixed anion ceramic that bridges oxide and chalcogenide chemistry. This is a research-stage material primarily studied for infrared optical applications, particularly nonlinear optics and wide-bandgap semiconductor contexts, where the mixed anion structure offers potential for tuning optical transparency windows and nonlinear response compared to single-anion ceramics like GeO₂ or conventional sulfides.

infrared optics and photonicsnonlinear optical deviceswide-bandgap semiconductorsmaterials researchoptical window engineeringsolid-state laser applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000619	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaGeO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental