GaGeH

ceramic

· JVASP-138991· GaGeH

GaGeH is an experimental hydrogen-containing compound combining gallium and germanium, belonging to the broader class of III-IV semiconductor ceramics and hydrides under research investigation. This material represents an emerging composition in compound semiconductor research, where hydrogen incorporation is explored for potential effects on electronic structure, defect passivation, or novel functional properties. While not yet established in commercial production, materials in this compositional family are of interest in semiconductor physics and materials development as researchers investigate how hydrogen doping or incorporation modifies the properties of conventional GaGe semiconductors.

semiconductor researchexperimental compoundhydrogen-doped materialsdefect passivation studiesmaterials development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	4.826	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.6256	eV/atom	—
Formation Energy(ΔHf)	0.6238	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaGeH

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental