GaGaON2

ceramic

· GaGaON2

GaGaON₂ is an experimental gallium oxynitride ceramic compound in the wide-bandgap semiconductor family, representing early-stage research into mixed-anion materials that combine gallium nitride and gallium oxide phases. While not yet established in mainstream industrial production, this material class is being investigated for high-temperature power electronics, UV optoelectronics, and extreme-environment applications where the combination of nitride and oxide constituents may offer improved thermal stability or bandgap tunability compared to single-phase GaN or Ga₂O₃ alternatives.

wide-bandgap power electronics (research)high-temperature semiconductorsUV photodetectors (exploratory)extreme-environment devicesgallium nitride variantsmaterials research/prototyping

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	3.390	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.660	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaGaON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental