GaGaOFN — Properties & Data | MatWorld

GaGaOFN

ceramic

· GaGaOFN

GaGaOFN is an experimental fluoride-based ceramic compound containing gallium and oxygen, investigated primarily in materials research contexts for optical and electronic applications. While not yet established in mainstream industrial production, this material belongs to the gallium oxide ceramic family, which shows promise for high-temperature semiconductors, UV optoelectronics, and power electronics where wide bandgap properties are advantageous over conventional silicon or gallium arsenide.

wide-bandgap semiconductorsUV optoelectronic deviceshigh-temperature electronicsexperimental optical materialspower device substratesresearch-phase compounds

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	-0.6514	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.9600	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaGaOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental