GaGaO2N — Properties & Data | MatWorld

GaGaO2N

ceramic

· GaGaO2N

GaGaO₂N is an experimental oxynitride ceramic compound combining gallium, oxygen, and nitrogen phases—a research-stage material belonging to the broader family of mixed-anion ceramics. This material class is under investigation for advanced optical, electronic, and structural applications where combining metallic elements with both oxygen and nitrogen offers potential for enhanced properties such as improved band gap engineering, thermal stability, or hardness compared to conventional oxides or nitrides alone.

semiconductor researchoptical coatings (experimental)high-temperature ceramicsphotocatalytic applicationswide band-gap electronics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	1.987	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.340	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaGaO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental