Gallium fluoride (GaF₃) is an inorganic ceramic compound belonging to the halide ceramic family, characterized by strong ionic bonding between gallium cations and fluoride anions. While primarily a research material rather than a commodity industrial ceramic, GaF₃ is investigated for specialized optical and electronic applications where its fluoride chemistry offers transparency in the infrared region and potential compatibility with fluorine-based processing environments. Its notable advantages over alternative gallium compounds include improved chemical stability in certain corrosive fluoride atmospheres and potential applications in photonics where halide ceramics offer lower phonon energies than oxide alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 55.07 | GPa | — | ||
Poisson's Ratio(ν) | 0.1400 | - | — | ||
Shear Modulus(G) | 55.86 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.524 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 5.030 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 6.720 | - | — | ||
| ↳ | 7.288 | - | — | ||
| ↳ | 4.561 range 2.390–6.732median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -114.2 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -3.045 | eV/atom | — | ||
| ↳ | -2.715 | eV/atom | — |