GaCuS2 — Properties & Data | MatWorld

GaCuS2

metal

· GaCuS2

GaCuS₂ is a quaternary metal chalcogenide compound combining gallium, copper, and sulfur. This material belongs to the family of metal sulfides and is primarily investigated in materials research for its semiconducting and optoelectronic properties rather than as an established engineering material in widespread commercial use.

Photovoltaic researchSemiconductor devicesThin-film optoelectronicsMaterials researchExperimental compound

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	4.290	kg/m³	DFT · OptB88vdW

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	0.7610	eV	DFT · OptB88vdW
↳	1.544	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)3 entries	12.68	-	DFT · OptB88vdW
↳	11.55	-	DFT · PBE
↳	10.62 range 9.453–11.78median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	9.297	-	DFT · OptB88vdW
↳	7.156	-	DFT · TBmBJ
Electronic Dielectric Tensor(ε∞)	Matrix (redacted)	-	DFT · PBE
Total Dielectric Tensor(ε)	Matrix (redacted)	-	DFT · PBE
Electron Effective Mass(m*e)	0.1667	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	1.330	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)2 entries	0.7427	C/m²	DFT · OptB88vdW
↳	0.02291	C/m²	DFT · PBE
Piezoelectric Stress Tensor(eij)	Matrix (redacted)	C/m²	DFT · PBE
Thermoelectric Power Factor(PF)2 entries	0.000298	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00173	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-54.44	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	288.4	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	31.79	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.6431	eV/atom	DFT · OptB88vdW

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Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaCuS2

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