GaCuS₂ is a quaternary metal chalcogenide compound combining gallium, copper, and sulfur. This material belongs to the family of metal sulfides and is primarily investigated in materials research for its semiconducting and optoelectronic properties rather than as an established engineering material in widespread commercial use.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.290 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7610 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 11.55 | - | — | ||
| ↳ | 12.68 | - | — | ||
| ↳ | 10.62 range 9.453–11.78median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.02291 | C/m² | — | ||
| ↳ | 0.7427 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -54.44 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6431 | eV/atom | — |