GaCuO2 is an experimental ternary oxide semiconductor compound combining gallium, copper, and oxygen elements. This material belongs to the broader class of mixed-metal oxides being investigated for optoelectronic and photovoltaic applications, where the combination of constituent elements can produce tunable band gaps and enhanced charge carrier properties compared to binary oxides. Research interest in this compound centers on potential applications in thin-film photovoltaics, transparent conducting oxides, and visible-light photocatalysis, though it remains primarily a laboratory material without established industrial production or widespread commercial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 151.3 | GPa | — | ||
| ↳ | 165.6 | GPa | — | ||
Poisson's Ratio(ν) | 0.3300 | - | — | ||
Shear Modulus(G)2 entries | 58.73 | GPa | — | ||
| ↳ | 71.68 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.071 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.470 | eV | — | ||
| ↳ | 1.010 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 10.50 | - | — | ||
| ↳ | 11.55 | - | — | ||
| ↳ | 8.370 range 6.087–10.65median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -120.4 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.02170 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.477 | eV/atom | — |