GaCuN3

metal

· GaCuN3

GaCuN3 is an experimental ternary nitride compound combining gallium, copper, and nitrogen elements, representing an emerging class of quaternary or mixed-metal nitride materials under investigation for semiconductor and optoelectronic applications. This material family is primarily of research interest rather than established industrial use; it belongs to the broader category of wide-bandgap semiconductors and metal nitrides that researchers are exploring for next-generation electronics, power devices, and possibly photonic applications where copper doping may modify electronic or magnetic properties.

experimental semiconductor researchwide-bandgap device developmentoptoelectronic prototypinghigh-temperature electronics explorationthin-film deposition studiescompound semiconductor engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000362	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.700	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaCuN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control