Gallium bromide (GaBr3) is an inorganic ceramic compound belonging to the III-V halide family, composed of gallium and bromine elements. While primarily a research material rather than a mainstream engineering ceramic, GaBr3 is investigated in optoelectronic and photonic applications due to its semiconductor properties and potential for infrared optical applications. Its primary interest lies in specialized domains such as scintillation detection, non-linear optics, and as a precursor material for compound semiconductor synthesis, where its chemical reactivity and optical characteristics offer advantages over more conventional alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 10.11 | GPa | — | ||
Poisson's Ratio(ν) | 0.2400 | - | — | ||
Shear Modulus(G) | 6.870 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.020 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.982 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 5.439 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -159.6 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -1.002 | eV/atom | — | ||
| ↳ | -0.7935 | eV/atom | — |