GaBN3

ceramic

· GaBN3

GaBN3 is a gallium boron nitride ceramic compound that combines gallium with boron nitride phases, representing an emerging material in the wide-bandgap semiconductor and advanced ceramic family. While primarily in research and development stages, this material is being investigated for high-temperature structural applications and potential semiconductor device contexts where the thermal stability and hardness of boron nitride phases combined with gallium's electronic properties could offer advantages over conventional alternatives like pure hexagonal boron nitride or gallium nitride.

high-temperature structural ceramicswide-bandgap semiconductor researchthermal management componentsadvanced refractory applicationsexperimental microelectronics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.02253	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.980	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaBN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental