GaBiO₂S is an experimental mixed-metal oxide-sulfide ceramic compound containing gallium, bismuth, oxygen, and sulfur. This material belongs to the family of quaternary semiconducting ceramics being explored for photocatalytic and optoelectronic applications, representing an emerging research composition rather than an established industrial material. Interest in GaBiO₂S stems from its potential to combine the wide bandgap properties of gallium-based ceramics with bismuth's photocatalytic activity and sulfur's influence on electronic structure, making it a candidate for next-generation environmental remediation, light-emission, or sensing technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.00145 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.100 | eV/atom | — |