GaAsRh2 is a compound ceramic material composed of gallium arsenide (GaAs) with rhodium (Rh) incorporation, likely in a research or specialized phase. This material combines semiconducting and ceramic properties, positioning it in the family of III-V compound semiconductors modified for enhanced performance. While not a mainstream industrial ceramic, materials in this class are investigated for high-temperature stability, radiation hardness, and specialized optoelectronic or catalytic applications where conventional semiconductors reach their limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 9.452 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.5298 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.00706 | eV/atom | — |