GaAsO₃ is an oxide ceramic compound based on gallium arsenide chemistry, representing a specialized material in the III-V semiconductor oxide family. While not a common structural ceramic, this compound is primarily of interest in research contexts for optoelectronic and photonic device applications, leveraging the unique electronic and optical properties inherent to gallium arsenide-derived materials. Engineers would consider this material for applications requiring specific refractive index properties, wide bandgap characteristics, or integration with existing GaAs device ecosystems—though it remains less established than conventional oxides like aluminum oxide or yttria in industrial production.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 175.2 | GPa | — | ||
Poisson's Ratio(ν) | 0.3000 | - | — | ||
Shear Modulus(G) | 81.38 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.771 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | — | ||
| ↳ | 0.08600 | eV | — | ||
Magnetic Moment(μB)2 entries | -0.01876 | μB | — | ||
| ↳ | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.7591 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -0.9720 | eV/atom | — | ||
| ↳ | 0.9400 | eV/atom | — | ||
| ↳ | -0.8763 | eV/atom | — |