GaAsN3

ceramic

· GaAsN3

GaAsN3 is a dilute nitride III-V semiconductor compound combining gallium arsenide with nitrogen incorporation, representing an emerging material in the III-V nitride family. This material is primarily of research and development interest for next-generation optoelectronic and photovoltaic applications where bandgap engineering and lattice matching to GaAs substrates are critical. The nitrogen incorporation allows tuning of electronic properties compared to conventional GaAs, making it relevant for high-efficiency solar cells, infrared emitters, and integrated photonic devices where extended wavelength range and improved efficiency are sought.

multijunction solar cellsinfrared emitters and detectorsbandgap-engineered optoelectronicsIII-V compound semiconductorsphotovoltaic researchlattice-matched device structures

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.8261	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.740	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAsN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental