GaAs5 is a gallium arsenide compound semiconductor ceramic, part of the III-V semiconductor family widely used in optoelectronic and high-frequency electronic applications. It is primarily employed in photovoltaic devices, laser diodes, integrated circuits, and RF/microwave components where direct bandgap properties and high electron mobility are essential. GaAs5 is valued over silicon in applications requiring high efficiency under concentrated light, radiation resistance, and operation at elevated temperatures, making it the material of choice for space solar cells and high-performance defense and communications systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.373 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1358 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.02423 | eV/atom | — |