GaAs0.9P0.1

semiconductor

· GaAs0.9P0.1

GaAs₀.₉P₀.₁ is a III-V semiconductor alloy composed primarily of gallium arsenide with 10% phosphorus substitution, forming a direct-bandgap compound semiconductor with bandgap energy intermediate between GaAs and GaP. This material is used in optoelectronic devices—particularly red and orange light-emitting diodes (LEDs) and laser diodes—where the phosphorus content tunes the emission wavelength to longer wavelengths than pure GaAs while maintaining efficient radiative recombination. The alloy is valued in display and indicator lighting applications where cost-effective, reliable light emission at specific visible wavelengths is required, and remains relevant in research for high-efficiency photovoltaic and integrated photonic applications.

Red/orange LEDs and indicatorsVisible-light laser diodesOptoelectronic integrated circuitsDisplay backlighting (legacy)Photovoltaic researchEpitaxial device layers

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.500	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAs0.9P0.1

Electrical Properties

Regulatory Screening

Environmental

Export Control