GaAs0.75Sb0.25

semiconductor

· GaAs0.75Sb0.25

GaAs₀.₇₅Sb₀.₂₅ is a III-V compound semiconductor alloy combining gallium arsenide and gallium antimonide in a 75:25 ratio, engineered to achieve intermediate bandgap and lattice properties between its parent compounds. This material is primarily investigated for infrared optoelectronics and thermophotovoltaic applications where its narrow bandgap enables detection and emission in the mid-to-far infrared spectrum; it also serves as a lattice-matched substrate or buffer layer for other III-V heterostructures in specialized research environments.

infrared detectorsthermophotovoltaic cellsoptoelectronic devicessubstrate engineeringresearch & developmentmid-infrared emitters

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6500	eV	—

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Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAs0.75Sb0.25

Electrical Properties

Regulatory Screening

Environmental

Export Control