GaAs0.3P0.7

semiconductor

· GaAs0.3P0.7

GaAs₀.₃P₀.₇ is a III-V direct-bandgap semiconductor alloy combining gallium arsenide (GaAs) and gallium phosphide (GaP), engineered to achieve intermediate optoelectronic properties between its parent compounds. This material is primarily used in light-emitting devices and photodetectors operating in the visible to near-infrared spectrum, with historical importance in early LED technology and applications requiring efficient photon emission at wavelengths around 560–650 nm (red-orange light range). Engineers select this alloy when lattice-matching to GaAs substrates is required while tuning the bandgap for specific wavelength requirements, making it valuable in indicators, display backlighting, and integrated photonic circuits where direct-bandgap performance and monolithic integration are critical.

Light-emitting diodes (LEDs)Optoelectronic sensorsVisible-spectrum photonicsIntegrated photonic circuitsDisplay backlightingPhotodetectors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.160	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAs0.3P0.7

Electrical Properties

Regulatory Screening

Environmental

Export Control