GaAs0.2Sb0.8

semiconductor

· GaAs0.2Sb0.8

GaAs₀.₂Sb₀.₈ is a III-V compound semiconductor alloy combining gallium arsenide and gallium antimonide in a 20:80 ratio, engineered to create a direct-bandgap material with a narrow bandgap energy suited for infrared applications. This alloy is used primarily in optoelectronic devices requiring mid-to-long wavelength infrared detection and emission, where its bandgap falls between pure GaAs and GaSb, making it valuable for thermal imaging, gas sensing, and military surveillance systems. The material's Sb-rich composition offers advantages over GaAs in reduced bandgap energy and improved performance in room-temperature infrared detectors, though it remains less common than binary GaAs or GaSb due to lattice-matching constraints and higher complexity in device fabrication.

infrared detectorsthermal imaging sensorsgas sensing devicesmilitary surveillance opticsnarrow-bandgap LEDsresearch optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.020	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAs0.2Sb0.8

Electrical Properties

Regulatory Screening

Environmental

Export Control