GaAs0.2P0.8

semiconductor

· GaAs0.2P0.8

GaAs₀.₂P₀.₈ is a III-V semiconductor alloy combining gallium arsenide and gallium phosphide in a 20:80 composition ratio, engineered to tune the bandgap for specific optoelectronic applications. This phosphide-rich compound is primarily used in light-emitting devices and photodetectors where wavelengths in the green-to-yellow spectral range are needed, offering a direct bandgap and good lattice matching properties that make it attractive for integrated photonic systems. Compared to pure GaAs or GaP, this intermediate composition allows engineers to select operating wavelengths and tune carrier dynamics for applications requiring visible light emission or detection.

LED emitters (green-yellow wavelengths)Photodiodes and photodetectorsIntegrated photonic circuitsVisible light optoelectronicsTelecommunications window optimizationResearch compound semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.200	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAs0.2P0.8

Electrical Properties

Regulatory Screening

Environmental

Export Control