GaAs0.1P0.9G1128

semiconductor

· GaAs0.1P0.9G1128

GaAs₀.₁P₀.₉ is a III-V semiconductor alloy composed primarily of gallium phosphide with a small fraction of gallium arsenide, representing a tuned composition within the GaAs-GaP solid-solution family. This material is engineered for optoelectronic applications where direct bandgap tuning between GaP and GaAs is needed, enabling emission or detection in the visible-to-near-infrared spectrum. The specific 90% phosphide composition positions it for LED and photonic devices where GaP's superior lattice match to certain substrates and GaAs's lower bandgap are both leveraged.

visible-spectrum LEDsphotonic integrated circuitsphotodetectorsresearch optoelectronicsIII-V heterostructuresband-engineered semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.220	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAs0.1P0.9G1128

Electrical Properties

Regulatory Screening

Environmental

Export Control