GaAlO2N

ceramic

· GaAlO2N

GaAlO₂N is an oxynitride ceramic compound combining gallium, aluminum, oxygen, and nitrogen phases, belonging to the family of wide-bandgap semiconductors and refractory ceramics. This material is primarily of research and emerging-technology interest for high-temperature structural applications and advanced optoelectronic or photonic devices where thermal stability, chemical resistance, and nitrogen-enhanced properties offer advantages over traditional oxides. It remains largely experimental; engineers would consider it where conventional aluminum oxide or gallium nitride alone cannot meet combined requirements for thermal cycling, corrosion resistance, or specific electronic properties.

high-temperature ceramicswide-bandgap semiconductorsthermal barrier coatingsrefractory applicationsadvanced optoelectronics researchchemical/oxidation resistance

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	1.133	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.240	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAlO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental