GaAgSnSe₄ is a quaternary semiconductor compound composed of gallium, silver, tin, and selenium, belonging to the family of chalcogenide semiconductors. This material is primarily of research and developmental interest rather than established industrial production, with potential applications in optoelectronic devices, photovoltaic systems, and infrared detection where its bandgap and crystal structure could offer advantages over binary or ternary alternatives. The combination of these four elements is investigated for tunable electronic properties and possible thermoelectric or nonlinear optical functionality.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.286 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6640 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3997 | eV/atom | — |