GaAgSeS is a quaternary chalcogenide compound combining gallium, silver, selenium, and sulfur elements, representing an emerging material in the semiconducting and photonic materials family. This compound is primarily of research interest for optoelectronic and nonlinear optical applications, where the combination of elements can produce tunable bandgaps and promising photovoltaic or detector properties. The material belongs to the broader class of complex sulfide-selenide semiconductors being investigated as alternatives to traditional III-V semiconductors for specialized infrared, visible, or UV applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 56.32 | GPa | — | ||
Poisson's Ratio(ν) | 0.3600 | - | — | ||
Shear Modulus(G) | 18.15 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.076 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.5590 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000800 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4948 | eV/atom | — |