GaAgS₂ is a ternary semiconductor compound combining gallium, silver, and sulfur elements, belonging to the family of chalcogenide semiconductors with potential optoelectronic properties. This material is primarily of research interest for photovoltaic devices, infrared optical applications, and nonlinear optical systems where its compound structure may offer band gap tuning and crystal anisotropy advantages over binary semiconductors. While not yet established in mainstream industrial production, materials in this family are investigated as alternatives to conventional III-V semiconductors in niche applications requiring specific wavelength responses or optical functionality in conditions where GaAs or similar compounds are less suitable.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 65.29 | GPa | — | ||
Poisson's Ratio(ν) | 0.3700 | - | — | ||
Shear Modulus(G) | 19.71 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.598 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9380 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 10.49 | - | — | ||
| ↳ | 10.92 | - | — | ||
| ↳ | 9.184 range 7.838–10.53median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.1046 | C/m² | — | ||
| ↳ | 0.7387 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -53.45 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00290 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5498 | eV/atom | — |