Ga8 Bi4 S16

semiconductor

· Ga8 Bi4 S16

Ga₈Bi₄S₁₆ is a quaternary chalcogenide semiconductor compound combining gallium, bismuth, and sulfur elements. This material belongs to the family of layered semiconductor sulfides, which are primarily of research and developmental interest for optoelectronic and thermoelectric applications rather than established commercial use. The bismuth-containing composition suggests potential for narrow bandgap semiconducting behavior and strong spin-orbit coupling effects, making it relevant to emerging technologies in infrared optics, topological electronic properties, and high-temperature thermoelectric energy conversion.

infrared detectors and opticsthermoelectric power generationtopological semiconductor researchphotovoltaic devices (experimental)high-temperature electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	26.98	GPa	—
Shear Modulus(G)	20.97	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.539	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.6500	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga8 Bi4 S16

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control