Ga6 Te6

semiconductor

· Ga6 Te6

Ga₆Te₆ is a compound semiconductor composed of gallium and tellurium in a 1:1 stoichiometric ratio, belonging to the III-VI semiconductor family. This material is primarily investigated in research contexts for its potential in infrared optics, photodetection, and thermoelectric applications, where its narrow bandgap and high refractive index make it attractive compared to more conventional semiconductors like GaAs or InSb. Industrial adoption remains limited, with most work confined to specialized optoelectronic and sensing research rather than high-volume production.

infrared photodetectorsoptical windows and lensesthermoelectric devicesresearch semiconductorsnarrow-gap device development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.9182	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.3500	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga6 Te6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control