Ga₄Bi₂O₉ is an inorganic ceramic compound in the gallium-bismuth oxide family, representing a mixed-metal oxide system with potential functional ceramic applications. This material remains largely in the research phase, with investigation focused on its ionic conductivity, thermal properties, and potential use in solid-state device applications where the combination of gallium and bismuth oxides offers unique electronic or electrochemical characteristics. The material's development reflects broader interest in complex oxide ceramics for advanced technologies where conventional single-oxide ceramics have limitations.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.951 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.929 | eV | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.000995 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.000463 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -154.4 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 446.4 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -1.794 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data