Ga₄Yb₁ is an intermetallic semiconductor compound composed of gallium and ytterbium, representing an experimental rare-earth gallide material. This compound is primarily of research interest for investigating electronic and thermal properties in rare-earth semiconductor systems, with potential applications in thermoelectric devices and advanced optoelectronic materials where the rare-earth dopant can modify band structure and charge carrier behavior.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 54.89 | GPa | — | ||
Shear Modulus(G) | 25.25 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00330 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4170 | eV/atom | — |