Ga₄Sr₂Te₈ is a quaternary semiconductor compound combining gallium, strontium, and tellurium elements. This is a research-stage material studied for its potential in optoelectronic and thermoelectric applications, belonging to the broader family of complex chalcogenide semiconductors that offer tunable bandgaps and phonon-scattering properties not easily achieved in binary or ternary systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 26.50 | GPa | — | ||
Shear Modulus(G) | 16.82 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.4525 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7570 | eV/atom | — |