Ga4 Si1 O8

semiconductor

· Ga4 Si1 O8

Ga₄Si₁O₈ is an experimental gallium silicate semiconductor compound combining gallium oxide with silicon in a mixed-valence oxide structure. This material belongs to the wide-bandgap semiconductor family and is primarily of research interest for next-generation optoelectronic and high-temperature electronic applications where conventional semiconductors reach their limits. While not yet commercialized at scale, gallium silicate compounds are being investigated for ultraviolet (UV) photonics, high-power switching devices, and extreme-temperature sensing due to the promising properties of gallium oxide-based systems.

UV optoelectronics researchHigh-temperature power electronicsWide-bandgap semiconductorsExperimental photonic devicesExtreme-environment sensingNext-generation semiconductor development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.648	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.146	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga4 Si1 O8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control