Ga₄Pb₂O₈ is a mixed-metal oxide semiconductor compound combining gallium and lead oxides in a defined stoichiometric ratio. This material belongs to the class of complex oxide semiconductors and is primarily of research interest rather than established commercial production. The compound is investigated for potential applications in optoelectronic devices, photocatalysis, and solid-state electronics where the band gap and crystal structure of mixed-metal oxides offer tunable electronic properties compared to single-component alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.625 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.781 | eV/atom | — |